PART |
Description |
Maker |
RJH60M0DPQ-E0 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D1DPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 |
800V 22A Phase Control SCR in a TO-208AA (TO-48) package 1600V 35A Phase Control SCR in a TO-208AA (TO-48) package 1400V 35A Phase Control SCR in a TO-208AA (TO-48) package 1200V 22A Phase Control SCR in a TO-208AA (TO-48) package 1000V 22A Phase Control SCR in a TO-208AA (TO-48) package 100V 22A Phase Control SCR in a TO-208AA (TO-48) package 600V 22A Phase Control SCR in a TO-208AA (TO-48) package MEDIUMPOWERTHYRISTORS 400V 22A Phase Control SCR in a TO-208AA (TO-48) package Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约 IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
FCA22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
|
Fairchild Semiconductor
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
HFA35HB60SCS |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
|
International Rectifier
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
QIQ0645002 |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
QIQ0645001 |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|